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HTT1115E
Silicon NPN Epitaxial Twin Transistor
REJ03G0838-0200 (Previous ADE-208-1439A) Rev.2.00 Aug.10.2005
Features
* Include 2 transistors in a small size SMD package: EMFPAK-6 (6 Leads: 1.2 x 0.8 x 0.5 mm)
Q1: Equivalent Buffer transistor 2SC5700 2SC5757 Q2: Equivalent OSC transistor
Outline
RENESAS Package code: PXSF0006LA-A (Package name: EMFPAK-6) Pin Arrangement
1. Collector Q1 2. Emitter Q1 3. Collector Q2 4. Base Q2 5. Emitter Q2 6. Base Q1
6
5
4
B1 6 Q1
E2 5 Q2
B2 4
1
23 C1 1 E1 2 C2 3
Note:
Marking is "F".
Rev.2.00 Aug 10, 2005 page 1 of 8
HTT1115E
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol Ratings Q1 15 4 1.5 50 Q2 10 3.5 1.5 80 Unit V V V mA mW C C
Collector to base voltage VCBO Collector to emitter voltage VCEO Emitter to base voltage VEBO Collector current IC Collector power dissipation PC Junction temperature Tj Storage temperature Tstg Note: Value on PCB. (FR-4 (13 x 13 x 0.635 mm)).
Total 200* 150 150 -55 to +150 -50 to +150
Electrical Characteristics (Q1)
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre fT |S21|2 NF Min 15 100 10 13 Typ 130 0.3 12 16 1.0 Max 0.1 1 0.2 170 0.45 2.0 Unit V A A A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 15 V, IE = 0 VCE = 4 V, RBE = infinite VEB = 0.8 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz, S = L = 50
Electrical Characteristics (Q2)
(Ta = 25C)
Item Collector to base breakdown voltage Collector cutoff current Collector cutoff current Emitter cutoff current DC current transfer ratio Reverse transfer capacitance Gain bandwidth product Forward transfer coefficient Noise figure Symbol V(BR)CBO ICBO ICEO IEBO hFE Cre fT |S21|2 NF Min 10 80 4 7 Typ 100 0.8 6 10 1.5 Max 0.6 0.2 0.1 130 1.1 2.3 Unit V A A A pF GHz dB dB Test conditions IC = 10 A, IE = 0 VCB = 10 V, IE = 0 VCE = 3.5 V, RBE = infinite VEB = 1.5 V, IC = 0 VCE = 1 V, IC = 5 mA VCB = 1 V, f = 1 MHz Emitter ground VCE = 1 V, IC = 5 mA, f = 1 GHz VCE = 1 V, IC = 5 mA, f = 900 MHz S = L = 50
Rev.2.00 Aug 10, 2005 page 2 of 8
HTT1115E
Main Characteristics (Q1)
Typical Output Characteristics
50 450 A
Typical Forward Transfer Characteristics
50 VCE = 1 V
0
A
400 A
Collector Current IC (mA)
Collector Current IC (mA)
50
350 A
300 A
40 30
40
250 A
200 A
150 A
30 20
20
100 A
10
IB = 50 A
10
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
200
Base to Emitter Voltage VBE (V)
Reverse Transfer Capacitance vs. Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
0.5
IE = 0 f = 1 MHz
DC Current Transfer Ratio hFE
V
CE
=1V
0.4
0.3 0.2
100
0.1
0 1
2 5
10
20
50
100
0
0.4
0.8
1.2
1.6
2.0
Collector Current IC (mA)
Gain Bandwidth Product vs. Collector Current
Collector to Base Voltage VCB (V)
S21 Parameter vs. Collector Current
20
VCE = 2 V
Gain Bandwidth Product fT (GHz)
20
f = 1 GHz
16
S21 Parameter |S21|2 (dB)
VCE = 2 V
16
12 8
12
8
VCE = 1V
4
VCE = 1 V
4 0
f = 900 MHz
0 1 2 5 10 20 50 100
1
2
5
10
20
50
100
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 8
HTT1115E
Noise Figure vs. Collector Current
5
4 f = 900 MHz VCE = 1 V
Noise Figure NF (dB)
3
2 VCE = 2 V
1
0 1
2 5
10
20
50
100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 4 of 8
HTT1115E
Main Characteristics (Q2)
Typical Output Characteristics
50
A
Typical Forward Transfer Characteristics
50 VCE = 1 V
500
450
A
400
A
3
A 50
300
Collector Current IC (mA)
40
Collector Current IC (mA)
3.5
A
40
A 250
30
200 A
30
20
150 A
100 A
20
10
IB = 50 A
10
0
0.5 1.0 1.5
2.0
2.5
3.0
0
0.2
0.4
0.6
0.8
1.0
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
200
Base to Emitter Voltage VBE (V) Reverse Transfer Capacitance vs. Collector to Base Voltage
Reverse Transfer Capacitance Cre (pF)
1.6 IE = 0 f = 1 MHz 1.4
DC Current Transfer Ratio hFE
VCE = 1 V
1.2 1.0
100
0.8 0.6 0 0.4 0.8 1.2 1.6 2.0
0 1 2 5 10 20 50 100
Collector Current IC (mA)
Collector to Base Voltage VCB (V)
Gain Bandwidth Product vs. Collector Current
20 20 f = 1 GHz 16 VCE = 2 V VCE = 1 V
S21 Parameter vs. Collector Current
f = 900 MHz
Gain Bandwidth Product fT (GHz)
S21 Parameter |S21|2 (dB)
16 VCE = 2V 12 VCE = 1V 8
12 8
4
4 0
0 1 2 5 10 20 50 100
1
2
5
10
20
50
100
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 5 of 8
HTT1115E
Noise Figure vs. Collector Current
5 4 f = 900 MHz
Noise Figure NF (dB)
3 2
VCE = 1 V
VCE = 2 V 1 0 1 2 5 10 20 50 100
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 6 of 8
HTT1115E
Main Characteristics (Common)
Collector Power Dissipation Curve
Collector Power Dissipation Pc* (mW)
250
*: Value on PCB.
200 150 100 50
(FR-4 (13 x13 x0.635 mm)) 2 devices total
0
50
100
150
200
Ambient temperature Ta (C)
Rev.2.00 Aug 10, 2005 page 7 of 8
HTT1115E
Package Dimensions
JEITA Package Code 3/4 RENESAS Code PXSF0006LA-A Package Name EMFPAK-6 / EMFPAK-6V MASS[Typ.] 0.0012g
D e
A c LP
E
HE
A
A b
L A e
xM S
Reference Symbol
Dimension in Millimeters
A2
A
yS b b1 c
A1 S I1 c1
e1
b2 A-A Section Pattern of terminal position areas
A A1 A2 b b1 c c1 D E e HE L LP x y b2 e1 I1
Min 0.45 0 0.45 0.1 0.1 1.15 0.75 0.95 0.05 0.1
Nom
0.17 0.15 0.13 0.11 1.2 0.8 0.4 1.0 0.1
Max 0.5 0.01 0.49 0.25 0.15 1.25 0.85 1.05 0.15 0.3 0.05 0.05 0.3 0.35
0.7
Ordering Information
Part Name HTT1115EFTL-E Quantity 5000 Shipping Container 178 mm Reel, 8 mm Emboss Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 8 of 8
Sales Strategic Planning Div.
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